检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
作 者:王智河[1] 曹效文[2] 方军[2] 陈治友[2] 李可斌
机构地区:[1]中国科学院上海冶金研究所 [2]中国科学院等离子体物理研究所 [3]中国科学院固体物理研究所
出 处:《物理学报》1999年第1期154-162,共9页Acta Physica Sinica
基 金:国家超导技术联合研究开发中心(批准号:95预069703)部分资助
摘 要:在0—10T磁场范围内,系统地测量了YBa2Cu3O7δ外延薄膜处于磁场平行和垂直膜面两种情况下的RT曲线和IV曲线,并对该样品的不可逆线和磁通玻璃线作了直接的比较.结果表明,由不同约化电阻率判据给出的不可逆线和磁通玻璃线遵守相同的H∝(T(0)-T(H))n关系.对于不可逆线,n=3/2,对于磁通玻璃线,n=4/3.不可逆线的位置不仅与判据有关而且与测量电流密度也有关,磁通玻璃线位于不可逆线的下方.探讨了磁通玻璃线与不可逆线间的关系.Abstract We have measured in detail the resistive transition and the isothermal current voltage curves in the case of applied magnetic field parallel and perpendicular to the surface of the film up to 10T for an epitaxial YBa 2Cu 3O 7 δ thin film, respectively. The comparative study of the irreversibility line from the R T curves with the vortex glass line from the I V curves was made. The results showed that the irreversibility line determined from the different reduced resistivity criterion and vortex glass line follow the same power law, H∝(T(0)-T(H)) n , and n=4/3 for the vortex glass line, n =3/2 for the irreversibility line. The irreversibility line is dependent not only on the different reduced resistivity criterion but also on the measuring current density. The vortex glass line lies below the irreversibility line. The possible origin of the difference between such two lines was discussed.
分 类 号:TM262.014[一般工业技术—材料科学与工程]
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:216.73.216.3