用电沉积法制备稀土填充热电材料Bi2Sb3Rex  

Preparation of Rare Earth Doped Thermoelectric Materials Bi_2Sb_3Re_x by Electrodeposition Method

作　　者：田鹏[1] 曾艳芳[1] 叶洞君[1] 龚晓钟[1] 

机构地区：[1]深圳大学化学与化工学院,深圳市功能高分子重点实验室,广东深圳518060

出　　处：《合成化学》2010年第3期356-360,共5页Chinese Journal of Synthetic Chemistry

基　　金：国家自然科学基金资助项目(50371058,50471108);广东省自然科学基金资助项目(04011311,021286);广东省科技计划资助项目(2006B14001001);深圳市基金资助项目(200450)

摘　　要：分别以脉冲电沉积法和直流电沉积法制备了稀土填充热电材料Bi2Sb3Rex(Re=Ce,Nd)。结果表明,采用脉冲电沉积法,在通断脉宽为Ton=10ms(电流1A),Toff=40ms(电流0A),电流密度2000A.m-2,电沉积时间180s的条件下制得的电沉积膜Bi2Sb3Ce2,表面均匀、光滑、致密;在通断脉宽为Ton=0.4ms(电流1A),Toff=2.4ms(电流0A),电流密度2800A.m-2,电沉积时间120s,占空比为0.142的条件下制得的电沉积膜Bi2Sb3Nd0.1,表面均匀、光滑、致密。Thermoelectric materials doped with rare earth,Bi2Sb3Rex（Re=Ce,Nd）,were prepared by pulse electrodeposition method and direct current electrodeposition method,respectively.The results showed that surface morphology of Bi2Sb3Ce2 and Bi2Sb3Nd0.1 exhibited the electrodeposit black film with uniformity,smooth and dense under the following pulse electrodeposition conditions of on and off pulse width Ton=10 ms（1 A）,Toff=40 ms（0 A）,pulse current density of 2 000 A·m-2,electrodeposition time of 180 s,and Ton=0.4 ms（1 A）,Toff=2.4 ms（0 A）,pulse current density of 2 800 A·m-2,electrodeposition time of 120 s,duty cycle of 0.142,respectively.

关 键 词：脉冲电沉积法 直流电沉积法 稀土填充热电材料 Bi2Sb3Rex 制备 

分 类 号：O646[理学—物理化学]