YSi_2纳米颗粒的制备及光学、电学性能研究  

Preparation,Electrical and Optical Characterization of YSi_2 Nanoparticles

作　　者：黄立娟[1] 王磊[1] 杜军[1] 

机构地区：[1]北京有色金属研究总院先进电子材料研究所,北京100088

出　　处：《中国稀土学报》2010年第3期311-315,共5页Journal of the Chinese Society of Rare Earths

基　　金：国家自然科学基金重点项目(50932001);国家自然科学基金青年科学基金(50902010);北京有色金属研究总院创新技术基金(200952701)资助

摘　　要：采用脉冲激光烧蚀高纯YSi2靶,在n型Si（100）单晶衬底上制备YSi2纳米颗粒。原子力显微镜（AFM）观察样品表面颗粒尺寸约40-50 nm。X射线光电子能谱（XPS）测试结果表明,YSi2纳米颗粒成分为Y-O-Si。室温下对样品的光致发光（PL）性能进行测试,在500 nm处有一个较大的宽峰,409 nm附近出现强度较弱的发光峰。前者与样品中Y-O-Si电荷迁移带有关,后者为衬底表面纳米尺寸SiOx复合中心离子发光。室温下,对原位制备的薄膜电学（I-V/C-V）性能进行测试,结果表明薄膜的介电常数约为13.6。Yttrium silicide nanoparticles were prepared on n-type Si（100） substrate using pulsed laser ablation method by ablating YSi2 target.The atomic force microscope images showed that the nanoparticles were about 40~50 nm.The X-ray photoemission spectroscopy measurements indicated that the nanoparticles possessed the chemical composition of Y-Si-O.The photoluminescence property of the sample was investigated at room temperature.There were two peaks located at 500 and 409 nm,which were related to transition of electrons in Y-Si-O and SiOx complex ions on the surface of Si substrate respectively.The electronical properties（I-V/C-V） of 10 nm-thick film were studied at room temperature,and the results indicated that the dielectric constant of film was near 13.6.

关 键 词：YSi2 纳米颗粒 脉冲激光烧蚀 光致发光 I-V/C-V 稀土 

分 类 号：O433.5[机械工程—光学工程]