蔡氏非线性电路的深入研究——参数测量和实验现象观察的新方法  

Detailed investigation on the Chua's nonlinear circuit——A novel approach for parameter measurement and phenomena observation

作　　者：罗页[1] 乐永康[1] 

机构地区：[1]复旦大学物理学系,上海200433

出　　处：《大学物理》2010年第6期53-57,65,共6页College Physics

基　　金：国家基础科学人才培养基金项目(J0730310)资助

摘　　要：精确测量了电路中各个元件的参数,为各种混沌现象的定量分析和数值模拟提供了可能;提出了一种新的测量非线性负阻方法,能精确而快捷地测量非线性负阻完整的I-U曲线;利用这种测量方法的实验电路,可以直接演示电路出现各种混沌现象时非线性负阻对应的工作区段,展示了非线性负阻在蔡氏电路产生混沌过程中所起的决定性作用,有利于学生更好地理解混沌现象产生的机理.Parameters of elements in the nonlinear circuit are measured precisely. A novel approach is proposed for a precise and convenient characterization of the nonlinear negative resistor. Based on this improved approach, it is possible to demonstrate simultaneously the chaos states of the circuit and their related I-U working regions of the nonlinear negative resistor, which is very helpful for a better understanding of the origin of nonlinear phenomera in the Chua＇ s circuit.

关 键 词：蔡氏电路 负阻测量新方法 混沌现象演示 负阻状态与混沌现象的关联 

分 类 号：O441.1[理学—电磁学]