水热电耦合法制备BaZrO_3薄膜  

Preparation of BaZrO_3 Films by Novel Hydrothermal Duplex Technique

作　　者：黄扬风[1] 刘好[1] 蔡业彬[1] 

机构地区：[1]茂名学院机电工程学院,茂名525000

出　　处：《佛山陶瓷》2010年第5期24-24,25,26,共3页Foshan Ceramics

摘　　要：本研究采用水热电耦合方法合成了BaZrO3薄膜。首先通过阴极放电等离子体(HCD-IP)在Si基片上沉积氮化锆(ZrN)薄膜,接着将包覆ZrN的Si基片侵入到水热电耦合装置中,其混合溶液为Ba(CH3COO)2和NaOH,在90℃的温度下工作1～15h。结果表明,在ZrN/Si基片上成功合成了立方BaZrO3薄膜。BaZrO3薄膜在ZrN上的生长速率比在块体Zr上的生长速率快,BaZrO3薄膜展示出纳米层结构,其厚度在15h后可达到2μm。本文讨论了溶液的反应温度和反应时间对薄膜形貌和厚度的影响。Barium zirconate（BaZrO3） films were successfully prepared by a novel hydrothermal galvanic couple technique. Zirconium nitride films were first deposited on Si substrates by hollow cathode discharge plasma ion plating （HCD-IP）. Subsequently, the ZrN coated Si specimens were soaked in Ba（CH3C00）2 and NaOH mixed alkaline solutions with a galvanic couple setup at 90℃ for 1-15 h. The growth rate of BaZrO3 films on ZrN was much faster than that on bulk-Zr. The BaZrO3 films exhibited a nanolayered structure and the thickness could reach about 2, m after 15h in the solution at 90℃.The dependence of the film morphology and thickness on the reaction temperature and time in the solution were discussed.

关 键 词：锆酸钡 薄膜 电耦合 

分 类 号：TB383.2[一般工业技术—材料科学与工程]