钇稳定二氧化锆流延成型薄膜的无压烧结研究  

Pressureless Sintering of Yttria-Stabilized Zirconia Thin Films Formed by Tape Casting

作　　者：鲁盛会[1] 李素芳[2] 向蓝翔[1] 陈宗璋[2] 吴振君[2] 周欣燕[1] 

机构地区：[1]中国原子能科学研究院,北京102413 [2]湖南大学化学化工学院,湖南长沙410082

出　　处：《稀土》2010年第3期62-66,共5页Chinese Rare Earths

基　　金：湖南省自然科学基金项目资助(07JJ3107)

摘　　要：讨论了流延法制备的钇稳定氧化锆（YSZ）陶瓷薄膜的无压烧结过程。通过SEM、TG-DTA和XRD等手段对素坯和烧结过程进行微观检测和表征。结果表明,固体含量为55%（质量分数）的素坯薄膜,在75℃-1000℃温度区间,有机添加剂的烧除对最终烧结体的致密化贡献不大,但对陶瓷薄膜的形变影响很大,YSZ素坯薄膜内有机添加剂的匀速烧除,能够有效控制流延法制备陶瓷薄膜的起翘开裂,且能够有效抑制最终烧结体内气孔的数量,对最终致密化起促进作用;在1000℃-1450℃的温度区间,陶瓷薄膜的晶粒生长和致密化主要以表面物质扩散机制进行,且晶粒的生长和致密化同步进行。在最佳烧结温度1500℃时相对密度达到最大值98%左右,随后,晶粒的尺寸随温度及保温时间的增加而增大,而密度有所下降。Pressureless sintering process of 8mol% yttria-stabilized zirconia thin films fabricated by tape casting was investigated using SEM,TG-DTA and XRD techniques.The results indicate that the burnout of organic additives in the green tapes affects the shape of thin films significantly in temperature range of 75℃～1000℃.Controlled emission of organic additives during sintering can avoid the distortion and cracking of the thin films and prevent the generation of large pores in the sintered body,and thus make ideal densification of the thin films.Surface mass diffusion may contribute to grain growth and densification of the YSZ thin films at temperature of 1000℃～1450℃.The relative density of the thin film is approximately 98% after sintered at 1500℃,the optimal sintering temperature.The grain size of the thin films becomes larger while the density decreases slightly with increasing temperature and lengthening holding time at temperature above 1500℃.

关 键 词：氧化锆 薄膜 烧结 流延 

分 类 号：TF124[冶金工程—粉末冶金] TQ174[冶金工程—冶金物理化学]