CuInSe_2 thin films obtained by pulse-plating electrodeposition technique with novel pulse wave  被引量:2

CuInSe_2 thin films obtained by pulse-plating electrodeposition technique with novel pulse wave

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作  者:WANG XiaoLi WANG GuangJun TIAN BaoLi WAN ShaoMing DU ZuLiang 

机构地区:[1]Key Laboratory for Special Functional Materials of Ministry of Education, Henan University, Kaifeng 475004, China

出  处:《Chinese Science Bulletin》2010年第18期1854-1858,共5页

基  金:supported by the National Natural Science Foundation of China (90306010,10874040);the Cultivation Fund of the Key Scien-tific and Technical Innovation Project, Ministry of Education of China (708062)

摘  要:CuInSe2 films were electrodeposited onto indium tin oxide(ITO) substrate in constant current mode using bell-like wave modulated square wave in aqueous solution.The films obtained at different pulse frequencies were characterized by scanning electron microscopy(SEM),X-ray energy dispersive spectroscopy(EDS) and X-ray diffraction(XRD).UV-Vis-NIR absorption spectro scopy was used to study the optical properties of these films.The results showed that the chalcopyrite phase CuInSe2 films with a smooth surface and stoichiometric composition could be obtained at appropriate pulse frequency.The crystallinity of CuInSe2 films could be further improved after annealing treatment.Despite this,we also found that the films obtained using the pulse-plating electrodeposition technique had a faster deposition rate and better film adhesion ability than that using the traditional CIS electrodeposition technique,which is significant to the low-cost CIS thin film solar cell production.CulnSe2 films were electrodeposited onto indium tin oxide (1TO) substrate in constant current mode using bell-like wave modu- lated square wave in aqueous solution. The films obtained at different pulse frequencies were characterized by scanning electron microscopy (SEM), X-ray energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD). UV-Vis-NIR absorption spectro- scopy was used to study the optical properties of these films. The results showed that the chalcopyrite phase CulnSe2 films with a smooth surface and stoichiometric composition could be obtained at appropriate pulse frequency. The crystallinity of CulnSe2 films could be further improved after annealing treatment. Despite this, we also found that the films obtained using the pulse-plating electrodeposition technique had a faster deposition rate and better film adhesion ability than that using the traditional CIS electrodeposition technique, which is significant to the low-cost CIS thin film solar cell production.

关 键 词:CuInSe2薄膜 脉冲电镀技术 CulnSe2 脉冲波 扫描电子显微镜 近红外吸收光谱 脉冲频率 铟锡氧化物 

分 类 号:O484[理学—固体物理]

 

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