有效阴极结构和空穴缓冲层的有机电致发光器件  

Organic Light-Emitting Diodes Based on Effective Cathode Structure and Hole Buffer Layer

作　　者：徐维[1,2] 罗钰[1] 王莉[1] 袁俊文[1] 

机构地区：[1]西安交通大学先进制造技术研究所,陕西西安710049 [2]五邑大学数学物理系,广东江门529020

出　　处：《华侨大学学报（自然科学版）》2010年第4期396-399,共4页Journal of Huaqiao University(Natural Science)

基　　金：国家自然科学基金资助项目(50805117);陕西省西安市应用材料创新基金资助项目(XA-AM-200804);中国博士后科研基金资助项目(20090461297)

摘　　要：在有机电致发光器件的电子传输层与注入层之间,以m-MTDATA作为HIL,使用三氧化钼(MoO3)插入超薄层LiF-Al-Alq3,有效促进电子注入;然后,从热动力学引发化学反应,生成n型Alq3掺杂物和促进电子注入的角度进行解释.用MoO3作为空穴注入缓冲层,插入到空穴注入层与传输层之间,利用其最高被占用分子轨道适合作缓冲层的特点,提高空穴注入能力.改善载流子注入后,电流效率、功率效率及亮度分别提高了64%,101%和63%,电压下降26%.Based on using m-MTDATA as HIL,electron injection was promoted by using MoO3,inserting ultrathin layer Alq3-LiF-Al between electron transport layer and injection layer of organic light emitting devices;it＇s explained from the point of view that thermal dynamics induced chemical reaction which generated n-type doping Alq3 and the facilitated electron injection.With its characteristics that the highest occupied molecular orbital is suitable for buffer layer,MoO3 was used as hole injection buffer layer,inserted between the hole injection layer and the transport layer,to improve hole injection ability.After carrier injection was improved,the current density,power efficiency and luminance are increased by 64 %,101% and 63% respectively,while the voltage was reduced by 26%.

关 键 词：有机发光器件 阴极结构 载流子 缓冲层 

分 类 号：TN383.1[电子电信—物理电子学]