内耦合型EBCCD的技术研究  

Research of the Inner-coupled EBCCD with Vacuum Structure

作　　者：戴丽英[1] 刘德林[1] 

机构地区：[1]中国电子科技集团公司第五十五研究所,南京210016

出　　处：《光电子技术》2010年第2期127-130,共4页Optoelectronic Technology

摘　　要：电子轰击电荷耦合器件(EBCCD)是一种微弱光信号成像器件,由于采用了内耦合的背照电荷耦合器件(CCD)结构,大大提高了该器件的探测灵敏度以及信噪比,使其探测的弱光下限能更低。采用国产面照CCD,成功研制出了具有背照功能的CCD以及能耐电子轰击的EBCCD。简单介绍了这种器件的工作原理、结构特点以及关键研究内容,并列出了实验分析及结果。The EBCCD with vacuum structure is a low light level imaging device. The detection sensitivity and SNR can he increase to make the EBCCD detect a lower level light by the application of the inner-coupled back-illuminated CCD structure. The domestic front-illuminated CCD is used to develop the back-illuminated CCD and the EBCCD which can endure the electron bombardment successfully. The working principle, structure and key technology of this kind of device are introduced. The relative program experiments are described in detail and the research results are analyzed.

关 键 词：电子轰击电荷耦合器件 背照电荷耦合器件 内耦合 微弱光 

分 类 号：TN386.5[电子电信—物理电子学]