紫外探测技术的新发展  

New Developments of UV-detection Technology

作　　者：张宣妮[1] 王益军[1] 张玉叶[1] 

机构地区：[1]咸阳师范学院物理与电子工程学院,咸阳712000

出　　处：《价值工程》2010年第17期3-5,共3页Value Engineering

基　　金：咸阳师范学院专项科研基金项目(06XSYK268);咸阳师范学院专项科研基金项目(09XSYK205);陕西省教育厅专项科研计划项目(09JK807)

摘　　要：介绍紫外探测技术的新发展。真空型紫外探测器以通道光电倍增管为代表,分析了以MCP为光电阴极基底,输入窗为透镜式的管子的特点;固体紫外探测器以GaN基紫外CCD为代表,把GaN紫外探测器与硅CCD多路传输器通过铟柱倒装互连而成的混合式紫外CCD。由于GaN基材料的禁带宽度与组分有关,光谱响应从200nm-365nm,在365nm(紫外光)波段具有很尖的截止响应特性,因而降低了对滤波器的要求,具有光谱响应特性好,灵敏度高,噪声小等优点。并对紫外探测的关键技术和发展动向做了初步分析,为紫外技术的进一步发展提供参考。The new devolopment of ultraviolet detect technique is introduced.Channel photomultiplier tube as the representative of Vacuum UV detector,analyzed characteristics of tubes that photocathode is substrated on MCP and the input window is lens-like ;As for Solid UV detector,GaN-based UV CCD detector is the represent,the GaN UV detectors with silicon CCD multiplexer via indium-column flip-chip interconnect made of hybrid UV-CCD.As the band gap of GaN-based materials is related to the composition,so Spectral response can be from 200 nm-365 nm.As the GaN material in 365nm（UV） band have a very sharp cut-off response characteristics,thereby reducing the filter requirements.And have done a preliminary analysis of their key technologies and developments,to provide reference for future development of UV technology in-depth.

关 键 词：紫外探测技术 真空型紫外探测器 通道光电倍增管 固体紫外探测器 

分 类 号：TN23[电子电信—物理电子学]