高性能U波段砷化镓体效应二极管  

A High-performance U-band GaAs Gunn Diode

作　　者：张晓[1] 邓衍茂[1] 张蕾[1] 李熙华[1] 王海涛[1] 刘萍[1] 钱刚[1] 夏丽华[1] 杨向云[1] 赵咏梅[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2010年第2期212-217,共6页Research & Progress of SSE

摘　　要：介绍了一种新型的高性能毫米波砷化镓体效应二极管,通过对材料、参数、工艺的优化与设计,较好地解决了高工作频率与高输出功率之间的矛盾,实现了器件性能的提升与突破。在U波段,最大连续波输出功率达180mW,最高转换效率约5%。This paper introduces the development of a new high-performance millimeter-wave GaAs Gunn diodes.Through the optimization of system design,the contradiction between the high operation frequency and high output power has been better solved,resulting in an improvement on performance of the Gunn diodes.At U-band,the highest output power is 180 mW,the highest efficiency of conversion is about 5%.

关 键 词：体效应管 U波段 双区阴极 热沉 低应力电镀 

分 类 号：TN315.3[电子电信—物理电子学]