聚焦电子束诱导SiOx纳米线表面碳沉积的分形生长  

Fractal growth of deposited carbon on the unirradiated surface of SiO_x nanowires induced by focused electron beam

作　　者：苏江滨[1,2] 朱贤方[2,3,4,5] 李论雄[2] 王连洲[2,4] 王占国[3] 

机构地区：[1]江苏工业学院数理学院,常州213164 [2]厦门大学物理系,厦门大学中国-澳大利亚功能纳米材料联合实验室,厦门361005 [3]中国科学院半导体研究所,中国科学院半导体材料科学重点实验室,北京100083 [4]ARC Centre of Excellence for Functional Nanomaterials,University of Queensland,St Lucia,Brisbane,Queensland 4072,Australia [5]中国科学院固体物理研究所,合肥230031

出　　处：《科学通报》2010年第16期1632-1637,共6页Chinese Science Bulletin

基　　金：国家科技计划国际科技合作与交流专项(2008DFA51230);国家重点基础研究发展计划(2007CB936603);国家自然科学基金(90401022,60776007);中澳科技合作特别基金(20050222);教育部科技研究重点项目(105099)资助

摘　　要：电子束诱导沉积技术已被证实可以实现各种材料的分形生长,但是目前尚未发现聚焦电子束辐照下低维纳米结构表面未受辐照位置的分形生长现象,造成了聚焦电子束诱导分形生长机理研究的空白与片面性.以透射电子显微镜中残留的有机气体分子为前驱体,室温下利用高能聚焦电子束辐照,研究了一维非晶SiOx纳米线表面未受辐照位置碳沉积的分形生长.利用高分辨透射电子显微镜对SiOx纳米线表面非晶碳的沉积过程进行原位观察,发现了SiOx纳米线表面未受辐照位置非晶碳的不均匀沉积及分形生长,并捕捉到了碳沉积分形生长过程的细节.同时对聚焦电子束诱导SiOx纳米线表面未受辐照位置非晶碳的不均匀沉积及分形生长机理进行了深入的探索.It has been proven that electron beam induced deposition technique can lead to fractal growth of some materials, while there is no report on the fractal growth on the unirradiated surface of low dimensional nanostructures as induced by focused electron beam irradiation. In this paper, the fractal growth on the unirradiated surface of amorphous SiOx nanowire was designedly in- vestigated via focused electron beam irradiation at room temperature, and the deposition details of amorphous carbon on the surface of SiOx nanowire was in-situ observed by a high resolution transmission electron microscope. It was found that a series of intriguing phenomena such as nonuniform deposition and fractal growth of amorphous carbon occured on the unirradiated surface of SiOx nanowire. More importantly, details of the fractal growth process of deposited carbon were also in-situ observed. Furthermore, the nonuniform deposition and fractal growth mechanisms of amorphous carbon occurred on the unirradiated sur- face of SiOx nanowire under focused electron beam irradiation were proposed and discussed.

关 键 词：透射电子显微镜 聚焦电子束诱导沉积 SiOx纳米线 非晶碳 分形生长 

分 类 号：TB383.1[一般工业技术—材料科学与工程]