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作 者:姜丹[1] 周桃生 刘珩[1] 尚勋忠[1] 张蕾[1] 何云斌[1]
机构地区:[1]湖北大学材料科学与工程学院,武汉430062
出 处:《硅酸盐通报》2010年第3期698-700,704,共4页Bulletin of the Chinese Ceramic Society
摘 要:采用固相烧结法合成0.97(Ba0.6Sr0.3Ca0.1)TiO3.0.03(Bi2O3.3TiO2)陶瓷材料,研究了掺杂稀土氧化物CeO2对陶瓷材料介电性能的影响。随CeO2加入量的增加,材料的介电常数先增大后减小再增大后减小,而介电损耗先减小后增大,击穿场强先增大后减小。当CeO2为0.1wt%时,介电常数最大,εr=2384。当CeO2为0.2wt%时,获得了介电常数为1730,介电损耗为0.0060,耐压为13.125kV/mm的高压低损耗陶瓷电容器瓷料。利用SEM分析了不同CeO2加入量时样品的断面形貌,结果表明:CeO2可以抑制晶粒生长,细化晶粒,形成固溶体,而过量的CeO2偏析于晶界。0.97(Ba0.6Sr0.3Ca0.1)TiO3·0.03(Bi2O3·3TiO2)ceramics were prepared by solid sintering method.The influence of rare-earth oxide CeO2 doping on the dielectric properties of the ceramics material has been studied.With increasing of the CeO2 additive amount within 0.4 wt%,the dielectric constant shows repeating variation of increasing and decreasing,and the dielectric loss decreases first and then increases,while the breakdown voltage behaves opposite,i.e.,first increasing and then decreasing.When doped with 0.1 wt% CeO2,the sample has a maximum dielectric constant,εr=2384.BST ceramics with optimum comprehensive properties have been obtained with doping of 0.2 wt% CeO2,showing high dielectric constant(εr=1730),low dielectric loss(tanδ=0.0060),and high breakdown voltage(Eb=13.125 kV/mm).The influence of CeO2 additive amount on the surface microstructure of(Ba,Sr,Ca)TiO3 ceramics has been studied by means of SEM.The results show that CeO2 tends to restrain the growth of the grains,leading to densified ceramics with refined grains,and forms a homogeneous solid solution with the BST base material,while excessive CeO2 segregates to the grain boundaries.
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