X波段MEMS分布式移相器开关机电性能研究  

Research on Electro-mechanical Performance of Switch for MEMS Distributed Phaser Working in X Band

作　　者：张晓升[1] 鲍景富[1] 杜亦佳[1] 李仁锋[2] 

机构地区：[1]电子科技大学电子工程学院,四川成都611731 [2]中国工程物理研究院,四川绵阳621900

出　　处：《现代电子技术》2010年第13期1-3,共3页Modern Electronics Technique

基　　金：预研基金项目(9140A230604);中国工程物理研究院科技发展基金重点项目(2008A0403016)

摘　　要：介绍一种应用于X波段MEMS分布式移相器的新型单元开关。MEMS分布式移相器具有高品质因数、低插损、低功耗和高隔离度的优点,但由于传统MEMS开关采用固支梁结构,弹性系数过大,下拉电压过高,无法与传统电子系统相兼容,大大限制了其应用和发展。基于此设计一种新型单元开关,采用弹性弯曲结构取代传统固支梁结构,并在MEMS金属梁上刻蚀释放孔,极大降低了单元开关的弹性系数,从而实现了超低下拉电压6 V。通过理论分析,给出MEMS开关弹性系数、下拉电压的解析公式,并使用ANSYS进行了仿真分析。A novel switch used in X-band MEMS distributed phase shifter is presented. The conventional MEMS switches with clamped beam are limited by high driven voltage due to its large elastic coefficient though they have some excellent merits, such as high quality factor, low loss, low power consumption and high isolation,. A novel basic switch which employs the elastic bending structure instead of conventional clamped beam is designed to decline the driven voltage. Some small release holes are sculptured in the MEMS beam to reduce the elastic coefficient rapidly and achieve the low driven voltage（6 V）. The elastic coefficient and analytical equations of the driven voltage for MEMS switch are given after theoretical analysis. The simulation analysis are performed with the software ANSYS.

关 键 词：X波段 射频微机电 分布式移相器 机电耦合性能 

分 类 号：TN911[电子电信—通信与信息系统]