PLZT在硅基板上的介电行为研究  

Dielectric Behavior of Lead Lanthanum Zirconate Titanate thin Film on Silicon Substrates

作　　者：未治奎[1] 张超[1] 焦永恒[1] 王英[1] 余大书[1] 

机构地区：[1]天津师范大学物理与电子信息学院,天津300389

出　　处：《山西师范大学学报（自然科学版）》2010年第2期55-58,共4页Journal of Shanxi Normal University(Natural Science Edition)

摘　　要：本文将Pb0.93La0.07Zr0.40Ti0.60O3薄膜镀到硅基底上,制得薄膜在硅基底铜电极上的电容器模型.高频段下(达120 MHz)测试了PLZT介电温度效益,100 MHz、室温下的介电常数是1 360,损耗为0.08,居里温度下介电常数是3 780,损耗为0.91.其在居里点附近弥散区域非常宽,通过计算得到弛豫时间的数量级为10-9s.In this paper,we have coated Pb0.93 La0.07 Zr0.40 Ti0.60 O3 flms on silicon substrate to create capacitor model that exhibit excellent dielectric properties.With PLZT coated directly on silicon substrate,we observed dielectric constant was 1 360,dielectric loss（tan δ） was 0.08 when measured at room temperature、100 MHz,and dielectric constant was 3 780,dielectric loss（tan δ） was 0.91 when measured at Curie temperature.The very wide dispersion area found in the vicinity of the Curie point,and the relaxation time（10-9 s）obtained by calculating of cole-cole plot and these indicated PLZT had fine Relaxation properties.

关 键 词：PLZT铁电薄膜 弛豫型 电容器 Cole-Cole曲线 

分 类 号：TN304[电子电信—物理电子学]