Laser Resistance of Ta2O5/SiO2 and ZrO2/SiO2 Optical Coatings under 2 9m Femtosecond Pulsed Irradiation  被引量:2

Laser Resistance of Ta2O5/SiO2 and ZrO2/SiO2 Optical Coatings under 2 9m Femtosecond Pulsed Irradiation

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作  者:刘娜 王英剑 周明 井绪峰 王胭脂 崔云 晋云霞 

机构地区:[1]1 Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 [2]Graduate School of Chinese Academy of Sciences, Beijing 100049

出  处:《Chinese Physics Letters》2010年第7期150-153,共4页中国物理快报(英文版)

摘  要:Ta2O5/SiO2 and ZrO2/SiO2 high reflecting (HR) coatings are prepared by ion beam sputtering and electron beam evaporation, respectively. The laser-induced damage thresholds (LIDTs) of these samples are investigated with 2μm femtosecond pulse lasers (80fs, 1kHz). It is found that the Ta2O5/SiO2 HR coating has a higher capability of laser damage resistance than the ZrO2/SiO2 HR coating in the 2μm femtosecond regime. The scanning electron microscope results show that the damage sites of the ZrO2//SiO2 FIR coating have a relatively porous structure, the loose structure of coatings will provide more sites for water molecules, and the LIDTs of HR coatings will be reduced as a result of the strong water absorption at the wavelength of 2 μm.Ta2O5/SiO2 and ZrO2/SiO2 high reflecting (HR) coatings are prepared by ion beam sputtering and electron beam evaporation, respectively. The laser-induced damage thresholds (LIDTs) of these samples are investigated with 2μm femtosecond pulse lasers (80fs, 1kHz). It is found that the Ta2O5/SiO2 HR coating has a higher capability of laser damage resistance than the ZrO2/SiO2 HR coating in the 2μm femtosecond regime. The scanning electron microscope results show that the damage sites of the ZrO2//SiO2 FIR coating have a relatively porous structure, the loose structure of coatings will provide more sites for water molecules, and the LIDTs of HR coatings will be reduced as a result of the strong water absorption at the wavelength of 2 μm.

分 类 号:O484.41[理学—固体物理] TB30[理学—物理]

 

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