Film Thickness Dependence of Rectifying Properties of La1.85Sr0.15CuO4/Nb-SrTiO3 Junctions  

作　　者：陈雷明 李广成 张燕 郭艳峰 

机构地区：[1]Zhengzhou Institute of Aeronautical Industry Management. Zhengzhou, Henan 450015 [2]National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190

出　　处：《Chinese Physics Letters》2010年第7期249-252,共4页中国物理快报（英文版）

基　　金：Supported by the Key Project Foundation of Science and Technology of He＇nan Province （092102210166） and the Natural Science Foundation of He＇nan Provincial Educational Department （2008A140013, 2010B140015）

摘　　要：In this work, p-n junctions are made from directly depositing optimal doped La1.85Sr0.15CuO4 （LSCO） films on n-type Nb-doped SrTiO3 substrates. Film thickness controlled rectifying behaviors are strikingly displayed. The starting points of the diffusion voltage reduction Vd-on change clearly with varying film thickness. Vd-on and Tc coincide with each other when the film thickness is larger than 300 nm, indicating a close relation between the two parameters. However, when the film is very thin （〈 350 nm） a departure between the two parameters was also observed. A possible reason for this is discussed within the framework of an inhomogeneous Sehottky contact. Enhanced interface inhomogeneity due to the tensile strain appears to be the origin.In this work, p-n junctions are made from directly depositing optimal doped La1.85Sr0.15CuO4 （LSCO） films on n-type Nb-doped SrTiO3 substrates. Film thickness controlled rectifying behaviors are strikingly displayed. The starting points of the diffusion voltage reduction Vd-on change clearly with varying film thickness. Vd-on and Tc coincide with each other when the film thickness is larger than 300 nm, indicating a close relation between the two parameters. However, when the film is very thin （〈 350 nm） a departure between the two parameters was also observed. A possible reason for this is discussed within the framework of an inhomogeneous Sehottky contact. Enhanced interface inhomogeneity due to the tensile strain appears to be the origin.

分 类 号：TN912.15[电子电信—通信与信息系统] TG335.56[电子电信—信息与通信工程]