Magnetic Properties and Magnetoresistance of CdMnS：Au Based Structures Prepared by Co-evaporation  

作　　者：何俊 黎明 金大训 李载春 李东京 付德君 姜泰远 

机构地区：[1]Department of Physics and Key Laboratory of Acoustic and Photonic Materials and Devices of Ministry of Education, Wuhan University Wuhan 430072 [2]Quantum-Functional Semiconductor Research Center (QSRC), Dongguk University, 3-26 Seoul 100-715, Korea

出　　处：《Chinese Physics Letters》2010年第7期282-284,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 10875090 and 10875091, and by the Korean Science and Engineering Foundation through QSRC at Dongguk University.

摘　　要：Polycrystalline CdMnS and CdMnS：Au films with hexagonal structure on Si（111） substrates are prepared by co-evaporation, and exhibit ferroelectric and ferromagnetic properties, respectively. Under optimized growth conditions, CdMnS：Au samples with an average crystallite size of 90nm and Mn concentration of 5.0at.% are obtained, and an all-semiconductor spin valve device of Co/Au/CdMnS：Au/CdMnS/Pt is fabricated. Electrical measurement of the device reveals the clear dependence of resistance on applied magnetic field, with a relative magnetoresistance of 0.06% and a switching field of 100 Oe at 77K.Polycrystalline CdMnS and CdMnS：Au films with hexagonal structure on Si（111） substrates are prepared by co-evaporation, and exhibit ferroelectric and ferromagnetic properties, respectively. Under optimized growth conditions, CdMnS：Au samples with an average crystallite size of 90nm and Mn concentration of 5.0at.% are obtained, and an all-semiconductor spin valve device of Co/Au/CdMnS：Au/CdMnS/Pt is fabricated. Electrical measurement of the device reveals the clear dependence of resistance on applied magnetic field, with a relative magnetoresistance of 0.06% and a switching field of 100 Oe at 77K.

分 类 号：O484.1[理学—固体物理] TQ127.2[理学—物理]