Low-Voltage Depletion-Mode Indium-Tin-Oxide Thin-Film Transistors Gated by Ba0.4Sr0.6TiO3 Dielectric  

作　　者：王丽萍 陆爱霞 窦威 万青 

机构地区：[1]Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082 [2]Ningbo Institute of Material Technology and Engineering. Chinese Academy of Sciences, Ningbo 315201

出　　处：《Chinese Physics Letters》2010年第7期285-287,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 10874042, the Foundation for Authors of National Excellent Doctoral Dissertation of China under Grant No 200752, and the Natural Science Foundation of Zhejiang Province （No 0804201051）.

摘　　要：We report on the fabrication and characterization of low-voltage indium-tin-oxide （ITO） thin-film transistors （TFTs） gated by a0.4Sr0.6TiO3 （BST） gate dielectric deposited at room temperature. The 400-nm-thick BST film shows a low leakage current density of 6 × 10^-8 A/cm^2 and a high specific capacitance of 83 nF/cm^2 （corresponding εr= 37）. The ITO TFTs gated by such BST dielectric operate in a depletion mode with an operation voltage of 5.0 V. The device exhibits a threshold voltage of -3.7 V, a subthreshold swing of 0.5 V/decade, a field effect mobility of 3.2cm^2/Vs and a current on/off ratio of 1.4× 10^4.We report on the fabrication and characterization of low-voltage indium-tin-oxide （ITO） thin-film transistors （TFTs） gated by a0.4Sr0.6TiO3 （BST） gate dielectric deposited at room temperature. The 400-nm-thick BST film shows a low leakage current density of 6 × 10^-8 A/cm^2 and a high specific capacitance of 83 nF/cm^2 （corresponding εr= 37）. The ITO TFTs gated by such BST dielectric operate in a depletion mode with an operation voltage of 5.0 V. The device exhibits a threshold voltage of -3.7 V, a subthreshold swing of 0.5 V/decade, a field effect mobility of 3.2cm^2/Vs and a current on/off ratio of 1.4× 10^4.

分 类 号：TN321.5[电子电信—物理电子学] TN304.21