影响AlInGaP LED光致发光与电致发光谱的决定性因素  

Domiant factor impacting the photoluminescence and electroluminescence spectra in AlInGaP LEDs

作　　者：文静[1] 文玉梅[1] 李平[1] 李恋[1] 朱永[1] 

机构地区：[1]重庆大学光电工程学院光电技术及系统教育部重点实验室,重庆400044

出　　处：《光电子．激光》2010年第5期659-663,共5页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目(60676031);重庆市自然科学基金资助项目(CSTC;2008BB3156);中国博士后科学基金资助项目

摘　　要：对AlInGaP红色发光二极管(LED)芯片的发光特性进行了测试分析,在注入强度相等的条件下,EL与PL形状相似,但存在差异,对其光致发光(PL)和电致发光(EL)特性进行了测试分析,研究结果表明,EL与PL有着相同的产生机理,影响其发光谱的因素完全相同;发光光谱之间的差异并不是注入方式的差异,而是源于载流子的不同注入方式给LEDpn结温度带来的不同影响。The luminescence characteristics at room temperature of AIInGaP red light-emitting diodes（LEDs） are measured and analyzed.The factors influencing the luminescence are investigated to reveal the internal relations between photoluminescence（PL） with photo absorption and electroluminescence（EL） through current injection.Under identical injection intensities,the normalized spectra of PL and EL exhibit obvious similarities in shape and apparent differences in spectral characteristic values.The analysis results show that the mechanism of production and influencing factors of PL and EL are both identical,and the differences are derived from the specific junction temperatures in distinct injection way but have nothing to do with self injection ways.

关 键 词：发光二极管(LED) 光致发光(PL) 电致发光(EL) 光谱 pn结温度 

分 类 号：TN364[电子电信—物理电子学]