Si基薄膜太阳电池绒面ZGO透明导电膜的研究  

Application of textured ZGO films on amorphous silicon based solar cells

作　　者：隋妍萍[1] 姜元建[1] 蔡宏琨[1] 陶科[1] 王林申[1] 赵静芳[1] 张德贤[1] 

机构地区：[1]南开大学信息技术科学学院电子科学与技术系,天津300071

出　　处：《光电子．激光》2010年第7期1018-1020,共3页Journal of Optoelectronics·Laser

基　　金：国家高技术研究发展计划资助项目(2006AA05Z422);天津市科技攻关计划资助项目(06YFGPGX08000);天津市应用基础及前沿技术研究计划资助项目(08JCYBJC13100)

摘　　要：采用孪生对靶直流磁控溅射的方法在室温下制备高质量的Ga掺杂ZnO(ZGO)透明导电薄膜,用HCl腐蚀的方法获得满足光散射特性的绒面ZGO薄膜。制备的ZGO样品为具有六角纤锌矿结构的多晶膜,具有(002)方向的择优取向。腐蚀后,绒面ZGO薄膜的晶粒度减小,电阻率基本不变。在可见光范围内,绒面ZGO的反射率比平面ZGO的反射率下降了10%左右。将绒面ZGO薄膜应用于p-i-n型非晶Si薄膜太阳电池中,有效提高了太阳电池性能,使得电池的短路电流提高到17.79 mA/cm2,电池的转换效率增加到7.23%。Ga-doped ZnO（ZGO） films are deposited by using DC magnetron sputtering with facing zinc oxide targets at room temperature in argon atmosphere.The crystal structure of the ZGO films is hexagonal wurtzite,and the orientation is along the c-axis perpendicular to the substrate.Textured ZGO films are prepared by etching the smooth films in 0.5% diluted HCl.The reflectivity of textured film in the visible range is decreased by 10% comparing with that of the smooth ZGO film,while the conductivity remains constant.The textured ZGO films are used as window layers in amorphous silicon based p-i-n thin film solar cells,leading to the effectively raise of the filed factors（FF） and efficiencies of the cells,which are 17.79 mA/cm2 and 7.23% respectively.

关 键 词：Ga掺杂ZnO(ZGO) 绒面ZGO 对靶磁控溅射 太阳电池 

分 类 号：TN304.054[电子电信—物理电子学]