半导体桥火工品的防静电和防射频技术  

Anti-electrostatic and Anti-RF Technology of Semiconductor Bridge Explosive Devices

作　　者：陈飞[1] 周彬[1] 秦志春[1] 李敏[2] 李鹏 

机构地区：[1]南京理工大学化工学院,江苏南京210094 [2]武警上海政治学院,上海200433 [3]武警江苏总队无锡支队,江苏无锡214071

出　　处：《爆破器材》2010年第3期28-32,共5页Explosive Materials

摘　　要：对电火工品及半导体桥火工品防静电、防射频的常用方法进行了分析和概述,防静电方法主要是采用绝缘环或者泄放通道,防射频方法主要是采用屏蔽和低通滤波器。指出了现有常用技术存在的问题和今后的发展方向,认为现有方法无法完全泄放杂散静电、很难做到无缝隙屏蔽,或会增加火工品体积和质量。利用微电子保护电路,是半导体桥火工品静电和射频防护技术未来的发展方向。This paper analyses and summarizes the commonly used methods of the anti-electrosytatic and anti-RF for EED and Semiconductor bridge （SCB）. The methods of anti-static are mainly using insulation ring or a drainage channel, while methods of anti-RF are mainly adopting shielding and low-pass filter. The existent problem and the development direction in future are pointed out. It is considered that the existing methods can not completely discharge stray current, have difficulty to seamless shielding, or they will increase the volume and weight. Applying micro-electronlcs circuit to protect SCB explosive device from electrostatic and BF is the development direction in the future.

关 键 词：半导体桥火工品 电火工品 静电防护 射频防护 

分 类 号：TJ450[兵器科学与技术—火炮、自动武器与弹药工程]