新型半导体n-n结构高选择性乙醇气敏元件  

A New Type Semiconductor n-n Structure Alcohol Gas Sensor of High Selectivity

作　　者：王毓德[1] 吴兴惠[1] 周桢来[1] 杨兴妍[1] 

机构地区：[1]云南大学佐波传感技术研究中心

出　　处：《仪表技术与传感器》1999年第1期25-27,共3页Instrument Technique and Sensor

摘　　要：】报道了一种基于气敏元件互补反馈和互补增强原理的新型半导体ｎ－ｎ结构高选择性乙醇气敏元件，该新型气敏元件具有高的选择性，同时还有好的热稳定性、高的灵敏度和抗湿度干扰能力。A new type semiconductor n-n structure alcohol gas sensor with high selectivity is reported in this paper. This gas sensor adopted the compensation-feedback and compensation multiplication principle and sensor's structure (n-n type structure) of achieving this principle. The results showed that the gas sensor has high selectivity, better thermostability, high sensitivity and capability of resistance humidity.

关 键 词：气敏元件 乙醇 半导体 气敏传感器 

分 类 号：TP212.03[自动化与计算机技术—检测技术与自动化装置]