运用精确电压衬度像技术实现精确定位的原位电子束纳米刻蚀：制造具有悬挂纳米线结构的纳米器件  

Precise voltage-contrast image assisted positioning for in-situ e-beam nanolithography:Nanodevice fabrication with suspended nanowire structures

作　　者：周维列 LIM Jin-Hee WILEY John B 

机构地区：[1]Advanced Materials Research Institute,University of New Orleans

出　　处：《电子显微学报》2010年第3期213-218,共6页Journal of Chinese Electron Microscopy Society

基　　金：美国国家自然科学基金会(No.NSF-0403673);美国国防部高级研究计划局(No.HR0011-07-1-0032);路易斯安那州基金管理会[LEQSF(2007-12)-ENH-PKSFI-PRS-04 and LEQSF(2008-11)-RD-B-10]的资助

摘　　要：本文演示了运用精确电压衬度像技术实现原位电子束纳米刻蚀技术的精确定位,并运用该技术制作成具有悬挂结构的纳米开关。通过运用精确电压衬度像定位技术,能够很好地控制偏转电极的定位,误差可减少到大约10nm。通过该技术,不用通过任何刻蚀过程只运用一次电子束纳米刻蚀,便可实现将分散的纳米线夹在两个电阻层中间形成悬挂结构。在原位电子束刻蚀的整个过程中,无需移动样品台从而消除了样品台的移动误差。因此,整个过程中不需要高精确的激光台和定位标记,从而简化了传统的电子束纳米刻蚀工艺。通过该方法制作的纳米开关随着施加电压的改变很好地实现了闭合和断开的状态。这种简化的过程提供了一种简单、低成本、快速的通过改装过的场发射扫描电子显微镜(FESEM)来制作纳米线悬挂结构的方法,并可运用该技术进一步制造多层结构和特殊的纳米器件。In this paper,we demonstrate a precise voltage contrast image positioning for in-situ e-beam nanolithography to integrate nanowires into suspended structures for nanoswitch fabrication.The positioning of the deflection electrodes to the nanowires can be well controlled using a precise voltage contrast image positioning technique,where the error can be minimized to about 10 nm.Using such a method,dispersed nanowires can be sandwiched between two layers of photoresist and suspended by one e-beam nanolithography without any etching process.The in-situ e-beam nanolithography eliminates the stage movement error by preventing any movements of the stage during the nanolithography process;hence,a high precision laser stage and alignment marks on the substrate are not needed,which simplifies the traditional e-beam nanolithography process.The fabricated nanoswitches using this method show ON and OFF states with the changes of applied voltages.The method demonstrated here can be applied for more complicated nanodevice fabrication.

关 键 词：原位电子束纳米刻蚀 扫描电子显微镜 纳米器件 纳米线 

分 类 号：TB383.1[一般工业技术—材料科学与工程]