有序合金中FCC→HCP相变温度内出现的缺陷  

THE DEFECTS FORMED BEFORE FCC→HCP TRANSITION IN THE INTERMETALLIC COMPOUND Fe 3 Ge

作　　者：陈奇志[1] 褚武扬[1] 颜庆云[2] 

机构地区：[1]北京科技大学材料物理系 [2]香港大学机械工程系

出　　处：《金属学报》1999年第1期1-5,共5页Acta Metallurgica Sinica

基　　金：国家自然科学基金

摘　　要：利用ＴＥＭ的高温台原位观察了Ｆｅ３Ｇｅ的Ｌ１２相在７８０℃（在７００℃以上Ｌ１２转变为ＤＯ１９）出现缺陷的过程．实验发现首先形核的是外禀层错，外禀层错比孤立的内禀层错扩展得快，并且扩展得较宽，它们有可能长大成为ＤＯ１９相的核胚．The faulting stage before L1 2→DO 19 transition was studied by in situ heating experiments in TEM.Many extrinsic stacking faults were observed in situ .The extrinsic stacking faults extended faster and broader than intrinsic stacking faults at 780℃. The extrinsic stacking faults were identified as embryos of the product DO 19 phase.

关 键 词：Fe3Ge FCC HCP 外禀层错 有序合金 相变温度 

分 类 号：TG111.2[金属学及工艺—物理冶金]