硅外延平面二极管过流振荡机理  

Current oscillation mechanism on silicon epitaxial planar diode

作　　者：赵卫东[1] 冯德仁[1,2] 孙建坤[1] 龙佼佼[1] 

机构地区：[1]安徽工业大学电气信息学院,安徽马鞍山243002 [2]中国科学技术大学国家同步辐射实验室,合肥230029

出　　处：《强激光与粒子束》2010年第7期1619-1622,共4页High Power Laser and Particle Beams

基　　金：国家高技术发展计划项目

摘　　要：描述了小空间尺度下一种硅外延平面二极管过流时的实验现象,以电压调控开关的模型解释这种现象。通过电压调控开关模型的二极管间隙间电势变化过程的定性分析可知,由于空间电荷效应,超过或临界空间电荷时,二极管电流有可能呈现振荡特性。通过无限大空间内薄束漂移的时间行为证明了这种振荡存在的可能性。用非线性方程的数学模型对这种现象做了仿真,仿真结果与实验现象相吻合。The experiment phenomenon in a small-scale space when a kind of silicon diode is in the over-current state is de- scribed and explained through the voltage-regulated switch model. The relaxation oscillation is proved through temporal behavior of the thin-beam drift in a infinite space. Moreover, the simulation made with nonlinear equation mathematical model, which is ap- plicable to chaos, demonstrates that under certain initial normalized current values and parameters, the simulation results are con- sistent with the experimental phenomena.

关 键 词：张弛振荡 电压调控开关 虚阴极 漂移 粒子群聚 渡越时间 

分 类 号：TN609[电子电信—电路与系统]