掺杂C545T对2T-NATA作为空穴注入层OLED性能的影响  

Influence of C545T on Green OLED with Hole-Injecting Materials 2T-NATA

作　　者：刘丁菡[1] 张方辉[1] 马颖[1] 蒋谦[1] 姚毅[1] 阎洪刚[1] 

机构地区：[1]陕西科技大学电子与信息工程学院,西安710021

出　　处：《半导体光电》2010年第3期356-359,362,共5页Semiconductor Optoelectronics

基　　金：浙江省温州市科技计划项目(H20080004);陕西省教育厅专项科研项目(07JK191);陕西省13115显示器工程中心建设项目(20072DGC-07)

摘　　要：实验制备了6组结构为ITO/2T-NATA(15nm)/NPB(25nm)/Alq3(20nm)∶C545T(x%)/Alq3(30nm)/LiF(1nm)/Al(100nm)的绿光多层结构OLED器件,其中x分别为0、1、2、3、4和5。比较了不同掺杂浓度条件下OLED器件的电致发光特性,结果表明:用2T-NATA作为空穴注入层可有效提高载流子的注入效果,同样能够达到高亮度。将C545T掺杂到Alq3中能够明显改善器件的发光亮度和色纯度,并调节载流子复合区域的位置,有效提高发光效率。掺杂C545T对器件性能的影响显著,随着C545T掺杂浓度的提高,电流和亮度先增大后减小。当掺杂浓度为3%时,14V电压下的最大发光亮度达到12418cd/m2,浓度为2%时的器件,在12V驱动电压下的最大电流效率为10.22cd/A。The green organic light-emitting （OELD） devices with a structured of ITO/2T-NATA（15 nm）/NPB（25 nm）/Alq3（20 nm）：C545T（x%）/Alq3（30 nm）/LiF（1 nm）/Al（100 nm）,here x varied from 0 to 5 with a step of 1 percent,were prepared via vacuum deposition. The electroluminescence characteristics of the devices with different concentrations are compared. The results show that adding 2T-NATA as the hole injecting layer can effectively improve the hole injecting as well as enhance the luminance. The doping of C545T can apparently alter the characteristics of brightness and color purity,regulate the recombination zone of carriers and effectively improve the luminance efficiency. However with the increase of doping concentration,the current and luminance increased firstly,then decreased. The 3% doped device obtained a maximum brightness of 12 418 cd/m2 at a voltage of 14 V and the 2% doped device reached a maximum current efficiency of 10.22 cd/A at a voltage of 12 V.

关 键 词：有机电致发光 掺杂 发光效率 色纯度 

分 类 号：TN383.1[电子电信—物理电子学]