PIN型非晶硅薄膜太阳电池仿真研究  

Simulation of PIN Solar Cells Based on Hydrogenated Amorphous Silicon Thin Films

作　　者：曾睿[1] 何世东[1] 龚宇光[1] 严来军[1] 李伟[2] 

机构地区：[1]电子科技大学光电信息学院,成都610054 [2]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《半导体光电》2010年第3期367-371,共5页Semiconductor Optoelectronics

摘　　要：运用AMPS软件,对TCO/p-a-SiC∶H/i-a-Si∶H/n-a-Si∶H/metal型非晶硅薄膜太阳电池进行了仿真研究,重点模拟和分析了电池性能参数随i层和n层厚度变化的规律。结果表明,为了获得电池转换效率和短路电流密度的最大值,n层非晶硅薄膜应尽可能地减小厚度,而i层非晶硅薄膜厚度最好控制在500～700nm范围内。The performance of thin-film solar cells based on hydrogenated amorphous silicon materials was simulated with AMPS-1D （Analysis of Microelectronic and Photonic Structures-1D） software,and especially the relation between the properties of the solar cells and thickness of i-layer or n-layer were analyzed and discussed. The simulation results show that it is better to cut down the thickness of n-layer so that the best efficiency and short-circuit current density could be obtained when the thickness of i-layer is set in the range of 500~700 nm.

关 键 词：薄膜太阳电池 非晶硅 计算机仿真 转换效率 

分 类 号：TM941.4[电气工程—电力电子与电力传动]