高功率离子束辐照膜基双层靶温度场的数值研究  

Numerical study on the evolution of temperature of double-layer target irradiated by high power ion beam

作　　者：吴迪[1] 宫野[2] 雷明凯[3] 刘金远[2] 王晓钢[2] 刘悦[2] 马腾才[2] 

机构地区：[1]大连大学物理科学与技术学院,大连116622 [2]大连理工大学三束材料改性重点实验室,大连116024 [3]大连理工大学材料科学与工程学院,表面工程实验室,大连116024

出　　处：《物理学报》2010年第7期4826-4830,共5页Acta Physica Sinica

基　　金：国家重点基础研究发展计划(批准号:2008CB717801);国家自然科学基金(批准号:10975026);大连大学博士启动基金(批准号:SBQ200810)资助的课题~~

摘　　要：采用TRIM程序模拟高功率离子束与铝基钛膜双层靶的相互作用.计算了束流在靶材内的能量沉积及分布情况,并以此沉积能量为热源项,采用有限差分方法求解非线性热传导方程,得到了温度场的分布规律,分析了不同离子流密度对界面物质状态的影响.结果表明,离子束电流密度在100—200A/cm2之间取值时,脉冲结束后界面处两种物质均达到熔融状态.The interaction between high power ion beam and the double-layer target system consisting of Ti film and Al substrate was simulated by TRIM Code.The evolution of energy distribution in the double-layer target irradiated by high power ion beam（HPIB） was obtained.Using the deposited energy in the target as the thermal source term in the nonlinear thermal conduction equations,finite differential method was used to solve the equations.And one-dimensional spatial and temporal evolution of the temperature of the Ti/Al double-layer target irradiated by HPIB during a pulse was obtained.The effect of the ion beam current density on the phase state of the film substrate interface was analyzed.The results show that both Ti and Al are melted at the interface when the ion beam current density is between 100 and 200 A·cm-2.

关 键 词：高功率离子束 双层靶 温度场 数值方法 

分 类 号：TL501.5[核科学技术—核技术及应用]