Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators  

作　　者：张云霄 廖栽宜 赵玲娟 潘教青 朱洪亮 王圩 

机构地区：[1]Key Laboratory of Semiconductors Materials,Institute of Semiconductors,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2010年第7期333-337,共5页中国物理B（英文版）

基　　金：supported by the National High Technology Research and Development of China (Grant Nos. 2006AA01Z256,2007AA03Z419 and 2007AA03Z417);the State Key Development Program for Basic Research of China (Grant Nos. 2006CB604901and 2006CB604902);the National Natural Science Foundation of China (Grant Nos. 90401025,60736036,60706009 and 60777021)

摘　　要：We report on chip-scale optical gates based on the integration of evanescent waveguide unitraveling-carrier photo- diodes （EC-UTC-PDs） and intra-step quantum well electroabsorption modulators （IQW-EAMs） on n-InP substrates. These devices exhibit simultaneously 2.1 GHz and -16.2 dB RF-gain at 21 GHz with a 450 t2 thin-film resistor and a bypass capacitor integrated on a chip.We report on chip-scale optical gates based on the integration of evanescent waveguide unitraveling-carrier photo- diodes （EC-UTC-PDs） and intra-step quantum well electroabsorption modulators （IQW-EAMs） on n-InP substrates. These devices exhibit simultaneously 2.1 GHz and -16.2 dB RF-gain at 21 GHz with a 450 t2 thin-film resistor and a bypass capacitor integrated on a chip.

关 键 词：electroabsorption modulator intra-step quantum wells uni-traveling-carrier RF-gain 

分 类 号：TN761[电子电信—电路与系统] TN364.2