Properties of C_(60) thin film transistor based on polystyrene  

作　　者：周建林 牛巧利 

机构地区：[1]Department of Electronic Engineering,College of Communication and Electronics,Chongqing University [2]Institute of Optoelectronic Materials and Technology,South China Normal University

出　　处：《Chinese Physics B》2010年第7期524-529,共6页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant No. 60676033)

摘　　要：This paper reports that the n-type organic thin-fihn transistors have been fabricated by using C60 as the active layer and polystyrene as the dielectric. The properties of insulator and the growth characteristic of C60 film were carefully investigated. By choosing different source/drain electrodes, a device with good performance can be obtained. The highest electron field effect mobility about 1.15 cm2/（V. s） could reach when Barium was introduced as electrodes. Moreover, the C60 transistor shows a negligible ＇hysteresis effect＇ contributed to the hydroxyl-free of insulator. The result suggests that polymer dielectrics are promising in applications among n-type organic transistors.This paper reports that the n-type organic thin-fihn transistors have been fabricated by using C60 as the active layer and polystyrene as the dielectric. The properties of insulator and the growth characteristic of C60 film were carefully investigated. By choosing different source/drain electrodes, a device with good performance can be obtained. The highest electron field effect mobility about 1.15 cm2/（V. s） could reach when Barium was introduced as electrodes. Moreover, the C60 transistor shows a negligible ＇hysteresis effect＇ contributed to the hydroxyl-free of insulator. The result suggests that polymer dielectrics are promising in applications among n-type organic transistors.

关 键 词：organic thin film transistors N-TYPE C60 POLYSTYRENE 

分 类 号：TB383.2[一般工业技术—材料科学与工程]