Ultraviolet laser-induced photovoltaic effects in miscut ferroelectric LiNbO_3 single crystals  

作　　者：李小明 王芳 赵昆 赵嵩卿 

机构地区：[1]State Key Laboratory of Heavy Oil Processing,China University of Petroleum [2]Laboratory of Optic Sensing and Detecting Technology,China University of Petroleum [3]International Center for Materials Physics,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2010年第7期559-562,共4页中国物理B（英文版）

基　　金：supported by the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-08-0841);the National Natural Science Foundation of China (Grant Nos. 60778034 and 60877038);the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 200804250006);Beijng Natural ScienceFoundation (Grant No. 4082026)

摘　　要：This paper investigates the photovoltaic properties of miscut LiNbO3 single crystal with different thicknesses under irradiation of a 248 nm ultraviolet laser pulse with 20 ns duration without an applied bias. Nanosecond photovoltaic response is observed and faster rise time is obtained in thinner samples. In accord with the 248 nm laser duration, the full width at half maximum of the photovoltaic signals keeps a constant of ~ 20 ns. With decrease of the crystal thickness, the photovoltaic sensitivity was improved rapidly at first and then decreased, and the maximum photovoltage occurred at 0.38 mm-thick single crystal. The present results demonstrate that decreasing the LiNbO3 single crystal thickness can obtain faster response time and improve the photovoltaic sensitivity.This paper investigates the photovoltaic properties of miscut LiNbO3 single crystal with different thicknesses under irradiation of a 248 nm ultraviolet laser pulse with 20 ns duration without an applied bias. Nanosecond photovoltaic response is observed and faster rise time is obtained in thinner samples. In accord with the 248 nm laser duration, the full width at half maximum of the photovoltaic signals keeps a constant of ~ 20 ns. With decrease of the crystal thickness, the photovoltaic sensitivity was improved rapidly at first and then decreased, and the maximum photovoltage occurred at 0.38 mm-thick single crystal. The present results demonstrate that decreasing the LiNbO3 single crystal thickness can obtain faster response time and improve the photovoltaic sensitivity.

关 键 词：photovoltaic effect LiNbO3 single crystal PHOTODETECTOR 

分 类 号：O482.7[理学—固体物理]