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作 者:陈树川[1,2] 钟志源[1,2] 鄢昌莲 徐祖耀[1,2]
机构地区:[1]上海交通大学材料科学与工程学院 [2]香港城市大学物理和材料科学系
出 处:《上海交通大学学报》1999年第2期131-134,138,共5页Journal of Shanghai Jiaotong University
基 金:国家自然科学基金
摘 要:采用电阻和内耗分析测定了不同Mn含量Fe-Mn-Si基形状记忆合金(SMA)相变临界点Ms、Mf、As、Af和TN,研究了母相反铁磁状态时γε马氏体相变热诱发和应力诱发的影响.发现,随着Mn含量的增加,Ms、Mf、As、Af降低,而TN升高直至热马氏体完全被抑制.当TN接近Ms时,母相反铁磁状态并不能完全抑制马氏体相变,而是使相变温区延伸到TN以下达-150°C的低温.即使热马氏体完全被抑制后应力仍然可以大量诱发马氏体相变,显示形状记忆效应(SME).这时应力诱发马氏体(SIM)的相对数量可由逆相变内耗峰的面积来评定.By employing the resistance and internal friction analysis, the critical points of Fe Mn Si based shape memory alloys were determined and the effect of fcc antiferromagnetism on thermal and stress induced martensitic transformation i.e. fcc→hcp was studied. With the increase of manganese content in the alloys, the critical points M s, M f, A s and A f decrease and the Neel temperature T N increases until the thermal martensite has been suppressed completely. As the T N closes the M s, the fcc antiferromagnetism extends the temperature range of the martensitic transformation to -150°C. After the thermal martensite is completely suppressed by the antiferromagnetic state, the martensitic transformation can also be induced to a great extent by the stress, as confirmed by the measurement of internal friction peak during the reverse martensitic transformation.
分 类 号:TG139.6[一般工业技术—材料科学与工程]
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