Monolithic integration of widely tunable sampled grating DBR laser with tilted semiconductor optical amplifier  

作　　者：刘扬 叶楠 王宝军 周代兵 安欣 边静 潘教青 赵玲娟 王圩 

机构地区：[1]Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2010年第7期26-28,共3页半导体学报（英文版）

基　　金：Project supported by the National High Technology Research and Development Program of China(Nos.2006AA01Z256,2007AA03Z4 19,2007AA03Z417);the State Key Development Program for Basic Research of China(Nos.2006CB604901,2006CB604902);the National Natural Science Foundation of China(Nos.90401025,60736036,60706009,60777021).

摘　　要：High output powers and wide range tuning have been achieved in a sampled grating distributed Bragg reflector laser with an integrated semiconductor optical amplifier.Tilted amplifier and anti-reflection facet coating are used to suppress reflection.We have demonstrated sampled grating DBR laser with a tuning range over 38 nm,good wavelength coverage and peak output powers of more than 9 mW for all wavelengths.High output powers and wide range tuning have been achieved in a sampled grating distributed Bragg reflector laser with an integrated semiconductor optical amplifier.Tilted amplifier and anti-reflection facet coating are used to suppress reflection.We have demonstrated sampled grating DBR laser with a tuning range over 38 nm,good wavelength coverage and peak output powers of more than 9 mW for all wavelengths.

关 键 词：sampled grating DBR lasers INTEGRATION SOA 

分 类 号：TN722[电子电信—电路与系统]