Hot carrier effects of SOI NMOS  

作　　者：陈建军 陈书明 梁斌 刘必慰 刘征 滕浙乾 

机构地区：[1]School of Computer Science,National University of Defense Technology

出　　处：《Journal of Semiconductors》2010年第7期36-40,共5页半导体学报（英文版）

基　　金：Project supported by the Key Program of the National Natural Science Foundation of China(No.60836004);the Ministry of Education Creative Team Research Project,China.

摘　　要：Hot carrier effect（HCE） is studied on annular NMOS and two-edged NMOS such as H-shape gate NMOS, T-shape gate NMOS and common two-edged NMOS.Based on the chemical reaction equation of HCE degradation and a geometry dependent reaction diffusion equation,a HCE degradation model for annular NMOS and two-edged NMOS is proposed.According to this model,we conclude that the time exponent of the threshold voltage degradation depends on the configuration of the gate,and annular NMOS has more serious HCE degradation than two-edged NMOS.The design,fabrication and HCE experiments of these NMOS in a 0.5-μm PD SOI process verify the correctness of the conclusion.Hot carrier effect（HCE） is studied on annular NMOS and two-edged NMOS such as H-shape gate NMOS, T-shape gate NMOS and common two-edged NMOS.Based on the chemical reaction equation of HCE degradation and a geometry dependent reaction diffusion equation,a HCE degradation model for annular NMOS and two-edged NMOS is proposed.According to this model,we conclude that the time exponent of the threshold voltage degradation depends on the configuration of the gate,and annular NMOS has more serious HCE degradation than two-edged NMOS.The design,fabrication and HCE experiments of these NMOS in a 0.5-μm PD SOI process verify the correctness of the conclusion.

关 键 词：annular NMOS two-edged NMOS hot carrier effects reaction diffusion model 

分 类 号：TN386.1[电子电信—物理电子学] TP212[自动化与计算机技术—检测技术与自动化装置]