An approach to obtain the pinch-off voltage of 4-T pixel in CMOS image sensor  

作　　者：李斌桥 于俊庭 徐江涛 于平平 

机构地区：[1]School of Electronics Information Engineering,Tianjin University

出　　处：《Journal of Semiconductors》2010年第7期53-56,共4页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Nos.60806010,60976030);the Tianjin Innovation Special Funds for science and Technology,China(No.05FZZDGX00200).

摘　　要：An approach to obtain the pinch-off voltage of 4-T pixel in CMOS image sensor is presented.This new approach is based on the assumption that the photon shot noise in image signal is impacted by a potential well structure change of pixel.Experimental results show the measured pinch-off voltage is consistent with theoretical prediction.This technique provides an experimental method to assist the optimization of pixel design in both the photodiode structure and fabrication process for the 4-T CMOS image sensor.An approach to obtain the pinch-off voltage of 4-T pixel in CMOS image sensor is presented.This new approach is based on the assumption that the photon shot noise in image signal is impacted by a potential well structure change of pixel.Experimental results show the measured pinch-off voltage is consistent with theoretical prediction.This technique provides an experimental method to assist the optimization of pixel design in both the photodiode structure and fabrication process for the 4-T CMOS image sensor.

关 键 词：pinch-off voltage CMOS image sensor photon shot noise pixel design 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]