Photoelectrochemical etching of uniform macropore array on full 5-inch silicon wafers  

作　　者：赵志刚 郭金川 雷耀虎 牛憨笨 

机构地区：[1]Institute of Optoelectronics Engineering,Shenzhen University [2]Institute of Optoelectronics Science and Engineering,Huazhong University of Science and Technology

出　　处：《Journal of Semiconductors》2010年第7期156-160,共5页半导体学报（英文版）

基　　金：Project supported by the Key Program of the National Natural Science Foundation of China(No.60532090).

摘　　要：We analyze the two main factors causing non-uniformity of the etched macropore array first,and then a novel photoelectrochemical etching setup for large area silicon wafers is described.This etching setup refined typical etching setups by a water cooling system and a shower-head shaped electrolyte circulator.Experimental results showed that the uniform macropore array on full 5-inch n-type silicon wafers could be fabricated by this etching setup.The morphology of the macropore array can be controlled by adjusting the corresponding etching parameters.We analyze the two main factors causing non-uniformity of the etched macropore array first,and then a novel photoelectrochemical etching setup for large area silicon wafers is described.This etching setup refined typical etching setups by a water cooling system and a shower-head shaped electrolyte circulator.Experimental results showed that the uniform macropore array on full 5-inch n-type silicon wafers could be fabricated by this etching setup.The morphology of the macropore array can be controlled by adjusting the corresponding etching parameters.

关 键 词：photoelectrochemical etching macropore array large area NON-UNIFORMITY current density 

分 类 号：TN304[电子电信—物理电子学]