电子俘获材料的红外最小可激发阈值  

Minimum Excited Threshold in Electron Trapping Materials

作　　者：范文慧[1,2] 王永昌[1,2] 侯洵[1,2] 杜力[1,2] 杨斌洲 赵卫[1,2] 牛丽红 

机构地区：[1]西安交通大学理学院现代物理研究所 [2]中国科学院西安光机所瞬态光学技术国家重点实验室

出　　处：《中国激光》1999年第3期257-262,共6页Chinese Journal of Lasers

摘　　要：在对撞脉冲锁模ＮｄＹＡＧ激光器产生的１．０６４μｍ超短红外脉冲激光激励下，采用参考光和测量光同时入射的测量方案，利用一台可见光条纹相机进行了电子俘获材料ＣａＳＥｕ，Ｓｍ的红外最小可激发阈值的研究，结果表明：在可见光条纹相机最小可探测能量密度Ｊｍｉｎ＝８．３×１０－１０Ｊ／ｍｍ２的条件下，测得电子俘获材料ＣａＳＥｕ，Ｓｍ的红外最小可激发阈值优于４．８×１０－９Ｊ／ｍｍ２。By means of projecting a reference light and measuring the light on the photocathode of a streak camera, the minimum excited threshold in electron trapping materials can be measured. The infrared minimum excited threshold of CaS∶Eu, Sm is measured to be less than 4.8×10 -9 J/mm 2 by a visible streak camera. The minimum detectable energy density of the camera is less than 8.3×10 -10 J/mm 2 (532 nm). The phosphor investigated is efficiently stimulated with the 1.064 μm photons from a pulsed CPM Nd∶YAG laser. According to the result, it is shown that this kind of novel materials might be used in the ETM based infrared photocathodes and other fields.

关 键 词：电子俘获材料 最小可激发阈值 超短红外光脉冲 

分 类 号：TN204[电子电信—物理电子学]