L波段低噪声放大器的分析与设计  

Design and Analysis of L-Band Low Noise Amplifier

作　　者：李沛[1] 吴晓光[1] 

机构地区：[1]武汉科技学院机电工程学院,湖北武汉430073

出　　处：《武汉科技学院学报》2010年第1期44-47,共4页Journal of Wuhan Institute of Science and Technology

基　　金：国家自然科学基金项目(50775166)

摘　　要：利用Advanced Design System(ADS)完成了L波段低噪声放大器(LNA)的设计。分析了实际电路可能产生的非连续性、寄生参数效应等因素对电路各个性能指标的影响,并针对这些因素利用ADS进行了电磁仿真计算,最后给出了放大器的仿真结果和最终电路及测试结果。采用ATF-35143器件设计,达到了预定的技术指标,工作频率1.21GHz,增益G大于14dB,噪声系数NF小于0.5 dB,输入1dB压缩点大于5dbm。An L band low noise amplifier（LNA） is designed in this paper by means of Advanced Design System（ADS）.The paper also elaborates on such factors as the possible discontinuity and parasitic parameter effect in actual circuit as well as their impacts on each performance index of the circuit.In consequence,the simulation results of LNA and the measured results of the final circuits are given by electromagnetic simultation calculation of ADS in connection with such factors.By adopting the ATF-35143 device in the design,technical index meet the expected specifications with the work frequency of 1.21GHz,conversion gain over 14dB,noise factor（NF） below 0.5dB,compression point over 5dbm with the input of 1dB.

关 键 词：射频微波集成电路 低噪声放大器 ADS 噪声系数 阻抗匹配 

分 类 号：TN722[电子电信—电路与系统]