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作 者:常新安[1] 臧和贵[1] 陈学安[1] 肖卫强[1]
机构地区:[1]北京工业大学材料科学与工程学院,北京100124
出 处:《人工晶体学报》2010年第B06期185-189,193,共6页Journal of Synthetic Crystals
基 金:北京市自然科学基金(No.2082002)
摘 要:本文进行了片状籽晶c向生长、点状籽晶全方位生长和锥头籽晶c向生长等不同方式的DKDP晶体生长研究。通过对不同生长方式分析、对比,认为锥头籽晶c向生长为最佳生长方式,以此方式在体积为10L的育晶器中顺利地生长出了c向尺寸达145mm的DKDP晶体。通过{100}晶面和{101}晶面面网密度和生长基元在不同晶面上成键的键能估算,结合晶体生长的Bravais法则和PBC理论对DKDP晶体生长习性进行了理论解释,同时对全方位生长晶体质量问题的成因进行了讨论。The growth of DKDP crystal in different style, include growth along c axis with sheet seed, growth in all directions with point seed and growth along c axis with conehead seed , have been studied. It is considered that growth along c axis with conehead seed is the best way by comparison and analysis. In this style, a DKDP crystal with the length of 145 mm along c axis has been grown successfully in 10 L growth container. By calculation of web densities and bond energies of { 100 } and { 101 }, a theoretical explaination about grow habit of the crystal has been given according to Bravais'rule and PBC theory, and the origin of quality problem of the crystal grown in all directions has been disccuseed properly.
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