自发成核Bridgman法生长LaBr_3∶Ce晶体  

Growth of LaBr_3∶Ce Crystal by Spontaneous Nucleation Bridgman Method

作　　者：史宏声[1] 秦来顺[1] 魏钦华[1] 陈晓峰[2] 任国浩[2] 舒康颖[1] 

机构地区：[1]中国计量学院,杭州310018 [2]中国科学院上海硅酸盐研究所,上海201800

出　　处：《人工晶体学报》2010年第B06期231-233,共3页Journal of Synthetic Crystals

基　　金：国家自然科学基金(No.50702054;No.20803070;No.6080801)

摘　　要：本文用垂直Bridgman自发成核的方法生长了尺寸达φ25mm×30mm的LaBr3∶Ce单晶,晶体透明,无宏观缺陷。分析了晶体生长中主要的问题,指出了原料处理的关键,并指出了自发成核条件下晶体最有可能的生长取向为[001]方向,该方向对抑制晶体开裂非常有利。LaBr3： Ce crystal with size Ф25 mm× 30 mm was grown by the Bridgman method spontaneously crystallization. The crystal is transparent and has no any macro-defects. through the The main problems of crystal growth and the key issues of the materials handling are analyzed. The most possible crystal growth orientation is [ 001 ] under spontaneously crystallizatian, and this orientation is benifical to inhibit the crystal crack.

关 键 词：BRIDGMAN法 LaBr3:Ce晶体 自发成核 晶体取向 晶体开裂 

分 类 号：O78[理学—晶体学]