Open-Gate Undoped-AIGaN-GaN HEMT Structure for pH Sensing Application  

作　　者：Sharifabad Maneea Eizadi Zainal Abidin Mastura Shafinaz Mustafa Farahiyah Hashim Abdul Manaf Abd Rahman Shaharin Fadzli Abdul Rahman Abdul Rahim Qindeel Rabia Omar Nurul Afzan 

机构地区：[1]Material Innovations and Nanoelectronics Research Group, Faculty of Electrical Engineering, Universiti Teknologi Malaysia Skudai 81310, Johor, Malaysia [2]Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, Skudai 81310, Johor, Malaysia [3]Telekom Research and Development, TM Innovation Centre, Cyberjaya 63000, Malaysia

出　　处：《材料科学与工程（中英文版）》2010年第7期1-6,共6页Journal of Materials Science and Engineering

关 键 词：HEMT器件 GaN pH值 掺杂 遥感应用 结构 AN型 高电子迁移率晶体管 

分 类 号：TN386[电子电信—物理电子学] TN304.23