N对Fe掺杂Si半导体性质的影响  

Influence of N on the Performance of Fe Doped Si Semiconductor

作　　者：潘成福[1] 刘清华[2] 刘永利[2] 

机构地区：[1]河北师范大学物理科学与信息工程学院,石家庄050016 [2]邢台学院物理系,河北邢台054001

出　　处：《半导体技术》2010年第7期673-675,共3页Semiconductor Technology

基　　金：国家自然科学基金(10774037);河北省自然科学基金(E2007000280)

摘　　要：采用离子注入方法在Si基底上制备了Fe和N共掺Si的薄膜样品。在没有N原子共掺的情况下,样品中掺入的Fe原子与Si反应生成了FeSi2,且薄膜的铁磁性非常微弱;而Fe与N共掺样品中没有发现FeSi2及Fe团簇,且在室温下显示明显的铁磁性。结果表明,N的引入对FeSi2的形成有一定的抑制作用,从而使样品的铁磁性增强。样品的输运性质也进一步证实了N的掺入使更多的Fe掺入到晶格中。In order to study the influence of N in Fe doped Si diluted magnetic semiconductor,Fe doped Si films with and without N were fabricated by implanting Fe and N into Si matrix.FeSi2 was found in the Si∶Fe film without N codoping and the film showed weak ferromagnetic behavior,while no FeSi2 or metal iron were detected in the sample with N codoping which showed significant ferromagnetism at room temperature.It can be concluded that N can restrain the formation of FeSi2 and enhance the room temperature ferromagnetism of Si∶Fe.This point can also be proved by resistivity depend on temperature of the films.

关 键 词：稀磁半导体 磁性 掺杂 离子注入 铁磁性 

分 类 号：TM305[电气工程—电机]