PECVD制备SiO_x-SiN_x薄膜的研究  

Study of SiO_x-SiN_x Films Deposited by PECVD

作　　者：韩培育[1,2] 季静佳 朱凡 王振交 钱洪强 李果华[1,3] 

机构地区：[1]江南大学理学院,江苏无锡214122 [2]尚德电力控股有限公司,江苏无锡214028 [3]江苏省(尚德)光伏技术研究院,江苏无锡214028

出　　处：《半导体技术》2010年第7期680-683,709,共5页Semiconductor Technology

摘　　要：首先使用工业型Direct-PECVD设备,采用SiH4和N2O制备了SiOx薄膜。针对Si太阳电池的应用,比较了SiOx薄膜在不同射频功率、气压、气体流量比和温度下的沉积特性,得出了最佳的沉积条件,这些沉积特性包括沉积速率、折射率和腐蚀速率。在该条件下沉积的SiOx膜均匀性良好、结构致密、沉积速率稳定,其性能满足了现阶段Si太阳电池对减反钝化层的光学和电学性能方面的要求。然后制备了SiOx-SiNx叠层减反钝化膜,并比较了SiO2与SiNx单层膜的减反和钝化效果,结果显示SiOx-SiNx叠层膜在不增加反射率的同时显著提高了Si片的钝化效果。SiOx thin films were deposited by industrialized Direct-PECVD with SiH4 and N2O.The best deposition condition of SiOx films for c-Si solar cell was obtained from the properties of SiOx deposited under different RF power,pressure,gas ratio and temperature,the properties included deposition rate,refractive index,and corrosion rate.Under this deposition condition,the SiOx films performed have good uniformity and compact structure,the performance can meet the optical and electrical requirements of the anti-reflection and passivation layer of silicon solar cells.SiOx-SiNx stack films are compared with SiNx single film in reflectivity and passivation performance,the result shows that the reflectivity of both films are almost the same,but the stack films has better passivation performance.

关 键 词：晶体硅太阳电池 氧化硅 减反 钝化 

分 类 号：TN914.4[电子电信—通信与信息系统]