GaAs器件电磁脉冲效应实验与毁伤机理研究  

Reseach of Electronic Magnetic Pulse Effect Test and Damaging Mechanisms of GaAs Device

作　　者：李用兵[1] 田国强[1] 王长河[1] 江西元[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2010年第7期695-698,共4页Semiconductor Technology

基　　金：重大基础研究项目973(5130102)

摘　　要：介绍了GaAs低噪声器件电磁脉冲效应实验响应的易损敏感端,对所确定的敏感端注入电磁脉冲方波,研究了器件在静态时的损伤阈值。根据GaAs器件易损性薄弱环节,从GaAs器件的结构、内部缺陷等出发,探索电磁脉冲对GaAs器件易损性薄弱环节的损毁机理。通过对毁伤实验分析,进一步阐述了电磁脉冲对器件存在潜在不稳定性失效,对器件和整机系统设计者和使用者具有一定的参考意义。GaAs微波低噪声器件在EMP正脉冲注入情况下,获得的损伤阈值约为3.024μJ。在EMP负脉冲注入情况下,损伤阈值约为10.02μJ。初步认为GaAs FET的正脉冲EMP比负脉冲EMP更易损伤。An easy damaging sensitive electrode response to electromagnetic pulse effect test of GaAs low noise device is introduced.The device damage threshold of static state was studied by injecting electromagnetic pulse square wave to the assured sensitive electrode.According to the easy damage parts of GaAs device,the damaging mechanisms of electromagnetic pulse were explored from its working principle,structure and inner defects and so on.The potential instable failure of electromagnetic pulse damage on the device is described based on the analysis of damage test,it provides certain reference to the designers and users of device and machine system.The results show that the damage threshold of GaAs low noise device is 3.024 μJ at positive EMP injection,10.02 μJ at negative wave,it means the positive EMP of GaAs FET is easier to be damaged than negative pulse.

关 键 词：砷化镓 电磁脉冲 毁伤机理 低噪声器件 阈值 

分 类 号：TN406[电子电信—微电子学与固体电子学]