稀土元素(Ce、Nd和Eu)掺杂Bi_4Si_3O_(12)晶体的生长与性能  

Growth and Properties of Rare earth(Ce,Nd and Eu)Doped Bi 4Si 3O 12 Crystals

作　　者：费一汀[1] 孙仁英[1] 

机构地区：[1]中国科学院上海硅酸盐研究所

出　　处：《人工晶体学报》1999年第1期37-41,共5页Journal of Synthetic Crystals

基　　金：山东大学晶体材料开放实验室资助

摘　　要：本文采用坩埚下降法生长出２０ｍｍ×２０ｍｍ×１００ｍｍ优质Ｂｉ４Ｓｉ３Ｏ１２晶体及Ｃｅ、Ｎｄ和Ｅｕ掺杂Ｂｉ４Ｓｉ３Ｏ１２晶体。测试了晶体的透射光谱、能谱及光产额、ＦＷＨＭ能量分辨率和激发－发射光谱。总结并解释了掺杂影响Ｂｉ４Ｓｉ３Ｏ１２晶体闪烁性能的规律，探讨了掺杂改善晶体闪烁性能的可能性。In this paper,high optical quality Bi 4Si 3O 12 and Ce,Nd,Eu doped Bi 4Si 3O 12 single crystals with the size 20mm×20mm×100mm have been grown by vertical Bridgman method.Their transmission spectra,relative light output,FWHM energy resolution,excitation spectra and emission spectra have been measured.The laws of doped effects on scintillation properties of Bi 4Si 3O 12 crystals are summarized and explained,and the possibility of improving its scintillation properties by doping is discussed.

关 键 词：掺杂 稀土元素 硅酸铋晶体 晶体生长 光学性 

分 类 号：O782.5[理学—晶体学] O734