基于肖特基接触IV分析法的有机半导体迁移率确定方法  

Novel Mobility Evaluation of Organic Semiconductor Based on Current-Voltage Characteristics of Schottky Contact

作　　者：谢宏伟[1] 李训栓[1] 王颖[1] 马朝柱[1] 汪润生[1] 李荣华[1] 宋长安[1] 彭应全[1,2] 

机构地区：[1]兰州大学物理学院微电子研究所,兰州730000 [2]兰州大学磁学与磁性材料教育部重点实验室,兰州730000

出　　处：《真空科学与技术学报》2010年第4期347-350,共4页Chinese Journal of Vacuum Science and Technology

基　　金：兰州大学磁学与磁性材料教育部重点实验室开放课题(No.MMM200811);甘肃省自然科学基金(No.0803RJZA104)

摘　　要：载流子迁移率的测量对有机半导体材料及器件的研究极为重要。在总结目前有机半导体迁移率测量方法优缺点的基础之上,本文提出了一种测量有机半导体中载流子迁移率的新方法:用真空蒸镀法制作结构为"金属-有机半导体-金属"的肖特基接触有机半导体器件,通过选取适当的理论模型进行数值计算,然后用理论计算的结果对实验测得的该器件IV特性进行数值拟合,从而得到该有机半导体材料中载流子的迁移率,以及该材料的其他输运参数,如陷阱密度、陷阱特征深度等。本文利用这种方法测量了酞菁铜(CuPc)的空穴迁移率,并得到了CuPc的陷阱密度、陷阱特征深度等参数。A novel technique was successfully developed to evaluate the mobility of a variety of organic semi-conductor materials and devices.In the technique,first,prototyped devices,consisting of metal-organic semiconductor-metal multi-layer with Schottky contact,were fabricated by vacuum deposition,then,its current-voltage characteristics were measured,and finally,the various physical quantities,including the carrier mobility,trap density,and trap distribution,were derived by means of data fitting and data comparison between the measured IV-characteristics and the simulated ones based on optimized models.The hole mobility,trap density and the characteristic trap distribution of copper phthalocyanine （CuPc） were measured in the newly-developed method.

关 键 词：有机半导体 迁移率 数值拟合 酞菁铜 

分 类 号：TN304.5[电子电信—物理电子学]