应用强磁场控制Zn薄膜取向研究  

Growth Orientation Control of Zn Films with Strong Magnetic Field

作　　者：任树洋[1] 任忠鸣[1] 任维丽[1] 

机构地区：[1]上海大学材料科学与工程学院,上海200072

出　　处：《真空科学与技术学报》2010年第4期430-433,共4页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金(No.50671060)

摘　　要：在不同磁场下,用真空蒸发法制备了不同方向放置的Zn薄膜。对样品进行X射线衍射分析表明,在大于3T的磁场环境下,垂直于磁场放置的基片上制备的Zn薄膜最强衍射峰为(002),而平行于磁场方向放置的基片上制备的试样最强衍射峰为(101)。Zn的磁各向异性引起了晶体在磁场环境下的择优生长,磁能较低的c轴方向是Zn薄膜的优先生长方向。利用磁场诱导晶体取向这一特性,提出了一种控制薄膜取向的新方法,通过调整基片与磁场方向的放置角度即可对制备薄膜的取向进行调整。We addressed the correlation between the magnetic field and the growth orientation of Zn film.The Zn films were grown by vacuum evaporation on quartz substrates,positioned in different orientations in a very strong magnetic field.The microstructures of the Zn films were characterized with X-ray diffraction and scanning electron microscopy.The results show that the magnetic field strongly affects the preferential growth orientation of the Zn film,possibly because of anisotropic magnetism.At a field greater than 3 T,when the substrate was orientated perpendicular to the magnetic field,the XRD peak corresponded to （002）;in contrast,when it was parallel with the field,the peak coincided with （101）.The preferential growth orientation of the Zn film was found to be c-axis,because of the lowest magnetization energy.We suggest that a strong magnetic field be capable of controlling the growth orientation of Zn films.

关 键 词：薄膜取向 基底材料 强磁场 磁取向 

分 类 号：O484.1[理学—固体物理]