Origin of the metallic to insulating transition of an epitaxial Bi(111) film grown on Si(111)  

作　　者：庞斐 梁学锦 廖昭亮 尹树力 陈东敏 

机构地区：[1]Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2010年第8期543-547,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.10874217 and 10427402);the National Basic Research Program of China(973 Program)(Grant No.2006CB933000)

摘　　要：Transport characteristics of single crystal bismuth films on Si（111）-7×7 are found to be metallic or insulating at temperature below or above Tc, respectively. The transition temperature Tc decreases as the film thickness increases. By combining thickness dependence of the films resistivity, we find the insulating behaviour results from the states inside film, while the metallic behaviour originates from the interface states. We show that quantum size effect in a Bi film, such as the semimetal-to-semiconductor transition, is only observable at a temperature higher than Tc.Transport characteristics of single crystal bismuth films on Si（111）-7×7 are found to be metallic or insulating at temperature below or above Tc, respectively. The transition temperature Tc decreases as the film thickness increases. By combining thickness dependence of the films resistivity, we find the insulating behaviour results from the states inside film, while the metallic behaviour originates from the interface states. We show that quantum size effect in a Bi film, such as the semimetal-to-semiconductor transition, is only observable at a temperature higher than Tc.

关 键 词：bismuth film interface states Rashba spin-splitting semimetal-to-semiconductor transition 

分 类 号：O484.1[理学—固体物理]