Study of depth-dependent tetragonal distortion of quaternary AlInGaN epilayer by Rutherford backscattering/channeling  

作　　者：G.Husnain 陈田祥 法涛 姚淑德 

机构地区：[1]State Key Laboratory of Nuclear Physics and Technology,Peking University

出　　处：《Chinese Physics B》2010年第8期563-566,共4页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.10875004);the National Basic Research Program of China(Grant No.2010CB832904)

摘　　要：A 240-nm thick Al0.4In0.02Ga0.58N layer is grown by metal organic chemical vapour deposition, with an over 1-μm thick GaN layer used as a buffer layer on a substrate of sapphire （0001）. Rutherford backscattering and channeling are used to characterize the microstructure of AlInGaN. The results show a good crystalline quality of AIInGaN （χmin = 1.5%） with GaN buffer layer. The channeling angular scan around an off-normal {1213} axis in the {1010} plane of the AlInGaN layer is used to determine tetragonal distortion eT, which is caused by the elastic strain in the AIInGaN. The resulting AlInGaN is subjected to an elastic strain at interracial layer, and the strain decreases gradually towards the near-surface layer. It is expected that an epitaxial AlInGaN thin film with a thickness of 850 nm will be fully relaxed （^eT = 0）.A 240-nm thick Al0.4In0.02Ga0.58N layer is grown by metal organic chemical vapour deposition, with an over 1-μm thick GaN layer used as a buffer layer on a substrate of sapphire （0001）. Rutherford backscattering and channeling are used to characterize the microstructure of AlInGaN. The results show a good crystalline quality of AIInGaN （χmin = 1.5%） with GaN buffer layer. The channeling angular scan around an off-normal {1213} axis in the {1010} plane of the AlInGaN layer is used to determine tetragonal distortion eT, which is caused by the elastic strain in the AIInGaN. The resulting AlInGaN is subjected to an elastic strain at interracial layer, and the strain decreases gradually towards the near-surface layer. It is expected that an epitaxial AlInGaN thin film with a thickness of 850 nm will be fully relaxed （^eT = 0）.

关 键 词：Ⅲ-Ⅴ semiconductors Rutherford backscattering and channeling tetragonal distortion 

分 类 号：TN304.2[电子电信—物理电子学]